QS6U24 transistor 1/3 small switching ( ? 30v, ? 1a) QS6U24 ! features 1) the QS6U24 conbines pch treueh mosfet with a schottky barrier diode in a single tsmt6 package. 2) pch treueh mosfet have a low on-state resisternce with a fast switching. 3) pch treueh mosfet is neucted a low voltage drive (4v). 4) the independently connected schottky barrier diode have a low forward voltage. ! applications ! external dimensions (units : mm) 0.16 0.85 2.9 2.8 1.6 0.4 1pin mark (1) (5) (3) (6) (2) (4) each lead has same dimensions abbreviated symbol : u24 tsmt6 (1)anode (2)source (3)gate (4)drain (5)n/c (6)cathode load switch, dc/dc conversion ! structure silicon p-channel mos fet schottky barrier diode ! packaging specifications QS6U24 tr 3000 type package code taping basic ordering unit (pieces) ! equivalent circuit ? 2 ? 1 (1) (2) (5) (3) (6) (4) (1)anode (2)source (3)gate (4)drain (5)n/c (6)cathode ? a protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltages are exceeded. ? 1 esd protection diode ? 2 body diode ! absolute maximum ratings (ta=25 c) ? 1 ? 1 parameter v v dss symbol ? 30 v v gss 20 a i d 1.0 a i dp 2.0 a i s ? 0.3 a i sp ? 1.2 c tch 150 limits unit parameter symbol limits unit ? 2 ? 3 v v rm 25 parameter symbol limits unit v v r 20 a i f 0.7 a i fsm 3.0 c tj 125 p d 1.0 c tstg ? 40~ + 125 drain-source voltage gate-source voltage drain current source current (body diode) channel temperature continuous pulsed continuous pulsed w/total ? 1 pw 10 s, duty cycle 1% ? 2 60hz ? 1cyc. ? 3 total mounted on a ceramic board repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature total power dissipatino range of strage temperature < mosfet > < di > < mosfet and di >
QS6U24 transistor 2/3 ! ! ! ! electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 av gs = 20v, v ds =0v v dd ? 15 v v dd ? 15 v typ. max. unit conditions v (br) dss ? 30 ?? vi d = ? 1ma, v gs =0v i dss ??? 1 av ds = ? 30v, v gs =0v v gs (th) ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma ? 300 400 m ? i d = ? 1a, v gs = ? 10v r ds (on) ? 500 700 m ? i d = ? 0.5a, v gs = ? 4.5v ? 600 800 m ? i d = ? 0.5a, v gs = ? 4v 0.5 ?? sv ds = ? 10v, i d = ? 0.5a c iss ? 90 ? pf v ds = ? 10v c oss ? 25 16 ? pf v gs =0v c rss ? 9 ? pf f=1mhz t d (on) ? 7 ? ns i d = ? 0.5a t r ? 18 ? ns t d (off) ? 7 ? ns v gs = ? 10v t f ? 1.7 ? ns r l =30 ? q g ? 0.6 ? nc r gs =10 ? q gs ? 0.4 ? nc v gs = ? 5v q gd ?? nc i d = ? 1.0a ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-starte resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed < mosfet > ! ! ! ! body diode (source-drain) v f ?? 0.49 v i f =0.7a i r ?? 200 av r =20v v sd ??? 1.2 v i s = ? 0.3a, v gs =0v forward voltage reverse leakage parameter symbol min. typ. max. unit conditions < mosfet > forward voltage drop parameter symbol min. typ. max. unit conditions < di > ! ! ! ! electrical characteristic curves 1 1.5 2 2.5 3 3.5 4 4.5 5 gate-source voltage : ? v gs (v) fig.1 typical transfer characteristics 0.001 0.01 drain current : ? i d (a) 10 0.1 1 ta = 125 c ta = 25 c ta =? 25 c ta = 75 c v ds =? 10v pulsed 0.1 1 10 100 1000 drain current : ? i d (a) fig.2 static drain-source on-state resistance vs. drain current ( ) 10000 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs =? 10v pulsed static drain-source on-state resistance : r ds (on) (m ? ) static drain-source on-state resistance : r ds (on) (m ? ) 0.1 1 10 100 1000 drain current : ? i d (a) fig.3 static drain-source on-state resistance vs. drain current ( ? ) 10000 v gs =? 4.5v pulsed ta = 125 c ta = 75 c ta = 25 c ta =? 25 c 0.1 1 10 100 1000 drain current : ? i d (a) fig.4 static drain-source on-state resistance vs. drain current ( ?? ) 10000 v gs =? 4v pulsed static drain-source on-state resistance : r ds (on) (m ? ) ta = 125 c ta = 75 c ta = 25 c ta =? 25 c 0246810121416 200 300 400 500 600 700 800 900 1000 1100 gate-source voltage : ? v gs ( v) fig.5 static drain-source on-state resistance vs. gate-source voltage 1200 i d = ? 1.2a i d = ? 0.6a ta = 25 c pulsed static drain-source on-state resistance : r ds (on) (m ? ) 0.1 1 10 100 1000 drain current : ? i d (a) 10000 ta = 25 c pulsed fig.6 static drain-source on-state resistance vs. drain current ( ) static drain-source on-state resistance : r ds (on) (m ? ) v gs =? 4.0v v gs =? 4.5v v gs =? 10v
QS6U24 transistor 3/3 0 0.5 1 1.5 2 0.01 0.1 1 source-drain voltage : ? v sd (v) fig.7 reverse drain current vs. source-drain voltage reverce drain current : ? i dr (a) 10 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs = 0v pulsed 0.01 0.1 1 10 100 10 100 drain-source voltage : ? v ds (v) fig.8 typical capacitance vs. drain-source voltage capacitance : c (pf) 1000 c iss c oss c rss ta=25 c f=1mh z v gs =0v 0.01 0.1 1 10 1 10 100 drain current : ? i d (a) fig.9 switching characteristics switching time : t (ns) 1000 t d(off) t r t d(on) t f ta=25 c v dd = ? 15v v gs = ? 10v r g =10 ? pulsed 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 6 7 total gate charge : qg (nc) fig.10 dynamic input characteristics gate-source voltage : v gs (v) 8 ta=25 c v dd = ? 15v i d = ? 1.2a r g =10 ? pulsed ! ! ! ! measurement circuits fig.11 switching time measurement circuit fig.12 switching waveforms fig.13 gate charge measurement circuit fig.14 gate charge waveforms v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t r t d(off) v gs i g(const) r g v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd
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